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STMicroelectronics STW57N65M5-4

MOSFET N CH 650V 42A TO247-4

Manufacturer
STMicroelectronics
Datasheet
Price
17.99
Stock
38

Product Details

Package / Case
TO-247-3
Vgs(th) (Max) @ Id
5.7V @ 10mA
Operating Temperature
-55°C ~ 175°C (TJ)
Rds On (Max) @ Id, Vgs
59mOhm @ 20A, 15V
Power Dissipation (Max)
228W (Tc)
Series
CoolSiC™
Supplier Device Package
PG-TO247-3-41
FET Type
N-Channel
Gate Charge (Qg) (Max) @ Vgs
52nC @ 15V
Vgs (Max)
+20V, -10V
Drain to Source Voltage (Vdss)
1.2kV
Technology
SiC (Silicon Carbide Junction Transistor)
Input Capacitance (Ciss) (Max) @ Vds
1.9nF @ 800V
FET Feature
-
Current - Continuous Drain (Id) @ 25°C
52A (Tc)
Part Status
Active
Drive Voltage (Max Rds On, Min Rds On)
15V
Mounting Type
Through Hole