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STMicroelectronics STW56N65M2-4
MOSFET N-CH 650V I2PAKFP
- Manufacturer
- STMicroelectronics
- Datasheet
- Price
- 5.31
- Stock
- 0
Product Details
- Packaging
- Tube
- Supplier Device Package
- TO-247
- Vgs (Max)
- ±25V
- Gate Charge (Qg) (Max) @ Vgs
- 80.4nC @ 10V
- Technology
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)
- 600V
- FET Feature
- -
- Input Capacitance (Ciss) (Max) @ Vds
- 2785pF @ 50V
- Part Status
- Active
- Current - Continuous Drain (Id) @ 25°C
- 29A (Tc)
- Mounting Type
- Through Hole
- Drive Voltage (Max Rds On, Min Rds On)
- 10V
- Package / Case
- TO-247-3
- Base Part Number
- STW36N
- Vgs(th) (Max) @ Id
- 5V @ 250µA
- Operating Temperature
- 150°C (TJ)
- Series
- Automotive, AEC-Q101, FDmesh™ II
- Rds On (Max) @ Id, Vgs
- 110mOhm @ 14.5A, 10V
- FET Type
- N-Channel
- Power Dissipation (Max)
- 190W (Tc)