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STMicroelectronics STW54NM65ND

MOSFET N-CH 650V 59A TO-247

Manufacturer
STMicroelectronics
Datasheet
Price
12.79
Stock
0

Product Details

Power Dissipation (Max)
94W (Tc)
Series
CoolSiC™
Supplier Device Package
PG-TO247-4-1
FET Type
N-Channel
Gate Charge (Qg) (Max) @ Vgs
13nC @ 18V
Vgs (Max)
+23V, -7V
Drain to Source Voltage (Vdss)
1.2kV
Technology
SiC (Silicon Carbide Junction Transistor)
Input Capacitance (Ciss) (Max) @ Vds
454pF @ 800V
FET Feature
-
Current - Continuous Drain (Id) @ 25°C
19A (Tc)
Part Status
Active
Drive Voltage (Max Rds On, Min Rds On)
15V, 18V
Mounting Type
Through Hole
Package / Case
TO-247-4
Vgs(th) (Max) @ Id
5.7V @ 2.5mA
Operating Temperature
-55°C ~ 175°C (TJ)
Rds On (Max) @ Id, Vgs
182mOhm @ 6A, 18V