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STMicroelectronics STU6N90K5
N-CHANNEL 900 V, 2.1 OHM TYP., 3
- Manufacturer
- STMicroelectronics
- Datasheet
- Price
- 2.13
- Stock
- 192
Product Details
- Operating Temperature
- -55°C ~ 150°C (TJ)
- Rds On (Max) @ Id, Vgs
- 117mOhm @ 14A, 10V
- Series
- HEXFET®
- Power Dissipation (Max)
- 3.1W (Ta), 110W (Tc)
- FET Type
- P-Channel
- Supplier Device Package
- TO-262
- Packaging
- Tube
- Gate Charge (Qg) (Max) @ Vgs
- 110nC @ 10V
- Vgs (Max)
- ±20V
- Drain to Source Voltage (Vdss)
- 100V
- Technology
- MOSFET (Metal Oxide)
- Input Capacitance (Ciss) (Max) @ Vds
- 1450pF @ 25V
- FET Feature
- -
- Current - Continuous Drain (Id) @ 25°C
- 23A (Tc)
- Part Status
- Active
- Drive Voltage (Max Rds On, Min Rds On)
- 10V
- Mounting Type
- Through Hole
- Package / Case
- TO-262-3 Long Leads, I²Pak, TO-262AA
- Vgs(th) (Max) @ Id
- 4V @ 250µA