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STMicroelectronics STP10N65K3
MOSFET N-CH 650V 10A TO220
- Manufacturer
- STMicroelectronics
- Datasheet
- Price
- 0
- Stock
- 0
Product Details
- Technology
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)
- 620V
- FET Feature
- -
- Input Capacitance (Ciss) (Max) @ Vds
- 875pF @ 50V
- Part Status
- Obsolete
- Current - Continuous Drain (Id) @ 25°C
- 5.5A (Tc)
- Mounting Type
- Surface Mount
- Drive Voltage (Max Rds On, Min Rds On)
- 10V
- Package / Case
- TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
- Base Part Number
- STB6N
- Vgs(th) (Max) @ Id
- 4.5V @ 50µA
- Operating Temperature
- 150°C (TJ)
- Series
- SuperMESH3™
- Rds On (Max) @ Id, Vgs
- 1.2Ohm @ 2.8A, 10V
- FET Type
- N-Channel
- Power Dissipation (Max)
- 90W (Tc)
- Packaging
- Tape & Reel (TR)
- Supplier Device Package
- D2PAK
- Vgs (Max)
- ±30V
- Gate Charge (Qg) (Max) @ Vgs
- 34nC @ 10V