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STMicroelectronics STI19NM65N
MOSFET N-CH 650V 15.5A I2PAK
- Manufacturer
- STMicroelectronics
- Datasheet
- Price
- 0
- Stock
- 0
Product Details
- Base Part Number
- STD4N
- Vgs(th) (Max) @ Id
- 4.5V @ 50µA
- Operating Temperature
- -55°C ~ 150°C (TJ)
- Series
- SuperMESH™
- Rds On (Max) @ Id, Vgs
- 2.7Ohm @ 1.5A, 10V
- FET Type
- N-Channel
- Power Dissipation (Max)
- 45W (Tc)
- Packaging
- Tube
- Supplier Device Package
- I-PAK
- Vgs (Max)
- ±30V
- Gate Charge (Qg) (Max) @ Vgs
- 12nC @ 10V
- Technology
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)
- 500V
- FET Feature
- -
- Input Capacitance (Ciss) (Max) @ Vds
- 310pF @ 25V
- Part Status
- Obsolete
- Current - Continuous Drain (Id) @ 25°C
- 3A (Tc)
- Mounting Type
- Through Hole
- Drive Voltage (Max Rds On, Min Rds On)
- 10V
- Package / Case
- TO-251-3 Short Leads, IPak, TO-251AA