STMicroelectronics STI10N62K3

Product Details

Vgs (Max)

±20V

Drain to Source Voltage (Vdss)

650V

Technology

MOSFET (Metal Oxide)

Input Capacitance (Ciss) (Max) @ Vds

807pF @ 400V

FET Feature

-

Current - Continuous Drain (Id) @ 25°C

6A (Tc)

Part Status

Active

Drive Voltage (Max Rds On, Min Rds On)

10V

Mounting Type

Through Hole

Package / Case

TO-220-3 Full Pack

Vgs(th) (Max) @ Id

4.5V @ 180µA

Operating Temperature

-55°C ~ 150°C (TJ)

Rds On (Max) @ Id, Vgs

280mOhm @ 3.6A, 10V

Series

CoolMOS™ CFD7

Power Dissipation (Max)

24W (Tc)

FET Type

N-Channel

Supplier Device Package

PG-TO220 Full Pack

Packaging

Tube

Gate Charge (Qg) (Max) @ Vgs

18nC @ 10V