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STMicroelectronics STH110N10F7-6
MOSFET N-CH 100V 110A H2PAK-6
- Manufacturer
- STMicroelectronics
- Datasheet
- Price
- 0
- Stock
- 0
Product Details
- Series
- MDmesh™ V
- Rds On (Max) @ Id, Vgs
- 600mOhm @ 3.5A, 10V
- FET Type
- N-Channel
- Power Dissipation (Max)
- 2.5W (Ta), 70W (Tc)
- Packaging
- Digi-Reel®
- Supplier Device Package
- PowerFLAT™ (5x5)
- Vgs (Max)
- ±25V
- Gate Charge (Qg) (Max) @ Vgs
- 15nC @ 10V
- Technology
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)
- 650V
- FET Feature
- -
- Input Capacitance (Ciss) (Max) @ Vds
- 690pF @ 100V
- Part Status
- Obsolete
- Current - Continuous Drain (Id) @ 25°C
- 1.4A (Ta), 7A (Tc)
- Mounting Type
- Surface Mount
- Drive Voltage (Max Rds On, Min Rds On)
- 10V
- Package / Case
- 14-PowerVQFN
- Base Part Number
- STL8
- Vgs(th) (Max) @ Id
- 5V @ 250µA
- Operating Temperature
- 150°C (TJ)