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STMicroelectronics STE139N65M5

N-CHANNEL 650 V, 0.014 OHM TYP.,

Manufacturer
STMicroelectronics
Datasheet
Price
30.64
Stock
0

Product Details

Mounting Type
Through Hole
Package / Case
TO-247-3
Vgs(th) (Max) @ Id
4V @ 4.4mA
Operating Temperature
175°C (TJ)
Rds On (Max) @ Id, Vgs
117mOhm @ 10A, 18V
Power Dissipation (Max)
-
Series
Automotive, AEC-Q101
Supplier Device Package
TO-247N
FET Type
N-Channel
Gate Charge (Qg) (Max) @ Vgs
106nC @ 18V
Vgs (Max)
+22V, -6V
Drain to Source Voltage (Vdss)
1200V
Technology
SiCFET (Silicon Carbide)
Input Capacitance (Ciss) (Max) @ Vds
2080pF @ 800V
FET Feature
-
Current - Continuous Drain (Id) @ 25°C
40A (Tc)
Part Status
Active
Drive Voltage (Max Rds On, Min Rds On)
18V