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STMicroelectronics STD7ANM60N
MOSFET N-CH 600V DPAK
- Manufacturer
- STMicroelectronics
- Datasheet
- Price
- 0
- Stock
- 3459
Product Details
- Series
- TrenchFET®
- Power Dissipation (Max)
- 6.25W (Ta), 104W (Tc)
- FET Type
- P-Channel
- Supplier Device Package
- PowerPAK® SO-8
- Packaging
- Digi-Reel®
- Gate Charge (Qg) (Max) @ Vgs
- 625nC @ 10V
- Vgs (Max)
- ±12V
- Drain to Source Voltage (Vdss)
- 20V
- Technology
- MOSFET (Metal Oxide)
- Input Capacitance (Ciss) (Max) @ Vds
- 22000pF @ 10V
- FET Feature
- -
- Current - Continuous Drain (Id) @ 25°C
- 60A (Tc)
- Part Status
- Active
- Drive Voltage (Max Rds On, Min Rds On)
- 2.5V, 10V
- Mounting Type
- Surface Mount
- Package / Case
- PowerPAK® SO-8
- Vgs(th) (Max) @ Id
- 1.4V @ 250µA
- Operating Temperature
- -55°C ~ 150°C (TJ)
- Rds On (Max) @ Id, Vgs
- 1.6mOhm @ 25A, 10V