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STMicroelectronics STD2HNK60Z-1
MOSFET N-CH 600V 2A IPAK
- Manufacturer
- STMicroelectronics
- Datasheet
- Price
- 1.24
- Stock
- 3428
Product Details
- FET Feature
- -
- Current - Continuous Drain (Id) @ 25°C
- 12A (Tc)
- Part Status
- Active
- Drive Voltage (Max Rds On, Min Rds On)
- 4V, 10V
- Mounting Type
- Through Hole
- Package / Case
- TO-220-3 Full Pack
- Vgs(th) (Max) @ Id
- 2V @ 250µA
- Operating Temperature
- -55°C ~ 175°C (TJ)
- Rds On (Max) @ Id, Vgs
- 100mOhm @ 9A, 10V
- Series
- HEXFET®
- Power Dissipation (Max)
- 41W (Tc)
- FET Type
- N-Channel
- Supplier Device Package
- TO-220AB Full-Pak
- Packaging
- Tube
- Gate Charge (Qg) (Max) @ Vgs
- 34nC @ 5V
- Vgs (Max)
- ±16V
- Drain to Source Voltage (Vdss)
- 100V
- Technology
- MOSFET (Metal Oxide)
- Input Capacitance (Ciss) (Max) @ Vds
- 800pF @ 25V