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STMicroelectronics STD1HNC60T4
MOSFET N-CH 600V 2A DPAK
- Manufacturer
- STMicroelectronics
- Datasheet
- Price
- 0
- Stock
- 0
Product Details
- Technology
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)
- 400V
- FET Feature
- -
- Input Capacitance (Ciss) (Max) @ Vds
- 530pF @ 25V
- Part Status
- Obsolete
- Current - Continuous Drain (Id) @ 25°C
- 5.5A (Tc)
- Mounting Type
- Through Hole
- Drive Voltage (Max Rds On, Min Rds On)
- 10V
- Package / Case
- TO-220-3
- Base Part Number
- IRF7
- Vgs(th) (Max) @ Id
- 4V @ 250µA
- Operating Temperature
- 150°C (TJ)
- Series
- PowerMESH™ II
- Rds On (Max) @ Id, Vgs
- 1Ohm @ 3A, 10V
- FET Type
- N-Channel
- Power Dissipation (Max)
- 100W (Tc)
- Packaging
- Tube
- Supplier Device Package
- TO-220AB
- Vgs (Max)
- ±20V
- Gate Charge (Qg) (Max) @ Vgs
- 24nC @ 10V