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STMicroelectronics STD16N50M2
MOSFET N-CH 500V 13A DPAK
- Manufacturer
- STMicroelectronics
- Datasheet
- Price
- 0
- Stock
- 383
Product Details
- Packaging
- Tube
- Gate Charge (Qg) (Max) @ Vgs
- 17.2nC @ 10V
- Vgs (Max)
- ±30V
- Drain to Source Voltage (Vdss)
- 650V
- Technology
- MOSFET (Metal Oxide)
- Input Capacitance (Ciss) (Max) @ Vds
- 841pF @ 100V
- FET Feature
- -
- Current - Continuous Drain (Id) @ 25°C
- 15A (Tc)
- Part Status
- Not For New Designs
- Drive Voltage (Max Rds On, Min Rds On)
- 10V
- Mounting Type
- Through Hole
- Package / Case
- TO-220-3
- Vgs(th) (Max) @ Id
- 4V @ 250µA
- Operating Temperature
- -55°C ~ 150°C (TJ)
- Rds On (Max) @ Id, Vgs
- 290mOhm @ 7.5A, 10V
- Series
- aMOS™
- Power Dissipation (Max)
- 208W (Tc)
- FET Type
- N-Channel
- Supplier Device Package
- TO-220