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STMicroelectronics STB6N62K3

MOSFET N-CH 620V 5.5A D2PAK

Manufacturer
STMicroelectronics
Datasheet
Price
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Stock
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Product Details

Series
SuperMESH3™
Rds On (Max) @ Id, Vgs
2.4Ohm @ 2.5A, 10V
FET Type
N-Channel
Power Dissipation (Max)
150W (Tc)
Packaging
Tube
Supplier Device Package
TO-220
Vgs (Max)
±30V
Gate Charge (Qg) (Max) @ Vgs
34nC @ 10V
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
1200V
FET Feature
-
Input Capacitance (Ciss) (Max) @ Vds
1050pF @ 100V
Part Status
Obsolete
Current - Continuous Drain (Id) @ 25°C
6A (Tc)
Mounting Type
Through Hole
Drive Voltage (Max Rds On, Min Rds On)
10V
Package / Case
TO-220-3
Base Part Number
STP6N
Vgs(th) (Max) @ Id
5V @ 100µA
Operating Temperature
-55°C ~ 150°C (TJ)