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STMicroelectronics STB36NM60N
MOSFET N-CH 600V 29A D2PAK
- Manufacturer
- STMicroelectronics
- Datasheet
- Price
- 0
- Stock
- 282
Product Details
- Series
- HiPerFET™, Polar3™
- Power Dissipation (Max)
- 1130W (Tc)
- FET Type
- N-Channel
- Supplier Device Package
- TO-264AA (IXFK)
- Packaging
- Tube
- Gate Charge (Qg) (Max) @ Vgs
- 150nC @ 10V
- Vgs (Max)
- ±20V
- Drain to Source Voltage (Vdss)
- 300V
- Technology
- MOSFET (Metal Oxide)
- Input Capacitance (Ciss) (Max) @ Vds
- 8630pF @ 25V
- FET Feature
- -
- Current - Continuous Drain (Id) @ 25°C
- 120A (Tc)
- Part Status
- Active
- Drive Voltage (Max Rds On, Min Rds On)
- 10V
- Mounting Type
- Through Hole
- Package / Case
- TO-264-3, TO-264AA
- Vgs(th) (Max) @ Id
- 5V @ 4mA
- Operating Temperature
- -55°C ~ 150°C (TJ)
- Rds On (Max) @ Id, Vgs
- 27mOhm @ 60A, 10V