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STMicroelectronics STB25NM60N
MOSFET N-CH 600V 21A D2PAK
- Manufacturer
- STMicroelectronics
- Datasheet
- Price
- 0
- Stock
- 0
Product Details
- Package / Case
- TO-220-3
- Base Part Number
- IRF6
- Vgs(th) (Max) @ Id
- 4V @ 250µA
- Operating Temperature
- 150°C (TJ)
- Series
- MESH OVERLAY™
- Rds On (Max) @ Id, Vgs
- 450mOhm @ 4A, 10V
- FET Type
- N-Channel
- Power Dissipation (Max)
- 80W (Tc)
- Packaging
- Tube
- Supplier Device Package
- TO-220AB
- Vgs (Max)
- ±20V
- Gate Charge (Qg) (Max) @ Vgs
- 51.8nC @ 10V
- Technology
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)
- 250V
- FET Feature
- -
- Input Capacitance (Ciss) (Max) @ Vds
- 770pF @ 25V
- Part Status
- Obsolete
- Current - Continuous Drain (Id) @ 25°C
- 8A (Tc)
- Mounting Type
- Through Hole
- Drive Voltage (Max Rds On, Min Rds On)
- 10V