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STMicroelectronics STB18NM60ND
MOSFET N-CH 600V 13A D2PAK
- Manufacturer
- STMicroelectronics
- Datasheet
- Price
- 0
- Stock
- 778
Product Details
- Vgs (Max)
- ±20V
- Gate Charge (Qg) (Max) @ Vgs
- 150nC @ 10V
- Technology
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)
- 40V
- FET Feature
- -
- Input Capacitance (Ciss) (Max) @ Vds
- 7500pF @ 25V
- Part Status
- Active
- Current - Continuous Drain (Id) @ 25°C
- 270A (Tc)
- Mounting Type
- Surface Mount
- Drive Voltage (Max Rds On, Min Rds On)
- 10V
- Package / Case
- PowerSO-10 Exposed Bottom Pad
- Base Part Number
- STV270
- Vgs(th) (Max) @ Id
- 4V @ 250µA
- Operating Temperature
- -55°C ~ 175°C (TJ)
- Series
- STripFET™ III
- Rds On (Max) @ Id, Vgs
- 1.5mOhm @ 80A, 10V
- FET Type
- N-Channel
- Power Dissipation (Max)
- 300W (Tc)
- Packaging
- Digi-Reel®
- Supplier Device Package
- 10-PowerSO