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STMicroelectronics STB18N60DM2
MOSFET N-CH 600V 12A
- Manufacturer
- STMicroelectronics
- Datasheet
- Price
- 0
- Stock
- 1003
Product Details
- Package / Case
- 8-PowerVDFN
- Vgs(th) (Max) @ Id
- 2.4V @ 1mA
- Operating Temperature
- 175°C
- Power Dissipation (Max)
- 960mW (Ta), 170W (Tc)
- Series
- U-MOSIX-H
- Supplier Device Package
- 8-DSOP Advance
- FET Type
- N-Channel
- Gate Charge (Qg) (Max) @ Vgs
- 122nC @ 10V
- Packaging
- Digi-Reel®
- Drain to Source Voltage (Vdss)
- 45V
- Vgs (Max)
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds
- 9600pF @ 22.5V
- Technology
- MOSFET (Metal Oxide)
- Current - Continuous Drain (Id) @ 25°C
- 300A (Tc)
- FET Feature
- -
- Drive Voltage (Max Rds On, Min Rds On)
- 4.5V, 10V
- Part Status
- Active
- Mounting Type
- Surface Mount