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STMicroelectronics STB13NM60N
MOSFET N-CH 600V 11A D2PAK
- Manufacturer
- STMicroelectronics
- Datasheet
- Price
- 0
- Stock
- 0
Product Details
- Rds On (Max) @ Id, Vgs
- 0.42mOhm @ 50A, 10V
- Power Dissipation (Max)
- 5W
- Gate Charge (Qg) (Max) @ Vgs
- 126nC @ 4.5V
- Series
- -
- Drain to Source Voltage (Vdss)
- 40V
- FET Type
- N-Channel
- Input Capacitance (Ciss) (Max) @ Vds
- 16013pF @ 20V
- Packaging
- Digi-Reel®
- Current - Continuous Drain (Id) @ 25°C
- 554.5A
- Vgs (Max)
- ±20V
- Drive Voltage (Max Rds On, Min Rds On)
- 4.5V, 10V
- Technology
- MOSFET (Metal Oxide)
- FET Feature
- -
- Part Status
- Active
- Vgs(th) (Max) @ Id
- 2V @ 250µA
- Operating Temperature
- -55°C ~ 175°C (TJ)