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STMicroelectronics STB11NM60FDT4
MOSFET N-CH 600V 11A D2PAK
- Manufacturer
- STMicroelectronics
- Datasheet
- Price
- 5.12
- Stock
- 37
Product Details
- FET Feature
- -
- Current - Continuous Drain (Id) @ 25°C
- 60A (Tc)
- Part Status
- Obsolete
- Drive Voltage (Max Rds On, Min Rds On)
- 4.5V, 10V
- Mounting Type
- Surface Mount
- Package / Case
- TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
- Vgs(th) (Max) @ Id
- 3V @ 250µA
- Operating Temperature
- -55°C ~ 175°C (TJ)
- Rds On (Max) @ Id, Vgs
- 3.9mOhm @ 20A, 10V
- Series
- TrenchFET®
- Power Dissipation (Max)
- 3.75W (Ta), 120W (Tc)
- FET Type
- N-Channel
- Supplier Device Package
- TO-263 (D2Pak)
- Packaging
- Digi-Reel®
- Gate Charge (Qg) (Max) @ Vgs
- 50nC @ 4.5V
- Vgs (Max)
- ±20V
- Drain to Source Voltage (Vdss)
- 20V
- Technology
- MOSFET (Metal Oxide)
- Input Capacitance (Ciss) (Max) @ Vds
- 5950pF @ 10V