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STMicroelectronics SCTH90N65G2V-7
SILICON CARBIDE POWER MOSFET 650
- Manufacturer
- STMicroelectronics
- Datasheet
- Price
- 0
- Stock
- 0
Product Details
- Package / Case
- TO-247-3
- Vgs(th) (Max) @ Id
- 5.6V @ 13.3mA
- Operating Temperature
- 175°C (TJ)
- Rds On (Max) @ Id, Vgs
- 39mOhm @ 27A, 18V
- Power Dissipation (Max)
- 262W
- Series
- Automotive, AEC-Q101
- Supplier Device Package
- TO-247N
- FET Type
- N-Channel
- Gate Charge (Qg) (Max) @ Vgs
- 104nC @ 18V
- Vgs (Max)
- +22V, -4V
- Drain to Source Voltage (Vdss)
- 650V
- Technology
- SiCFET (Silicon Carbide)
- Input Capacitance (Ciss) (Max) @ Vds
- 1526pF @ 500V
- FET Feature
- -
- Current - Continuous Drain (Id) @ 25°C
- 70A (Tc)
- Part Status
- Active
- Drive Voltage (Max Rds On, Min Rds On)
- 18V
- Mounting Type
- Through Hole