ROHM Semiconductor US5U1TR

Product Details

Vgs (Max)

±20V

Drain to Source Voltage (Vdss)

30V

Technology

MOSFET (Metal Oxide)

Input Capacitance (Ciss) (Max) @ Vds

70pF @ 10V

FET Feature

Schottky Diode (Isolated)

Current - Continuous Drain (Id) @ 25°C

1.4A (Ta)

Part Status

Active

Drive Voltage (Max Rds On, Min Rds On)

4V, 10V

Mounting Type

Surface Mount

Package / Case

6-SMD (5 Leads), Flat Lead

Vgs(th) (Max) @ Id

2.5V @ 1mA

Operating Temperature

150°C (TJ)

Rds On (Max) @ Id, Vgs

240mOhm @ 1.4A, 10V

Series

-

Power Dissipation (Max)

1W (Ta)

FET Type

N-Channel

Supplier Device Package

TUMT5

Packaging

Tape & Reel (TR)

Gate Charge (Qg) (Max) @ Vgs

2nC @ 5V