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ROHM Semiconductor SCT3080ALGC11
MOSFET N-CH 650V 30A TO247
- Manufacturer
- ROHM Semiconductor
- Datasheet
- Price
- 9.88
- Stock
- 1118
Product Details
- Series
- -
- Power Dissipation (Max)
- 96W (Tc)
- FET Type
- N-Channel
- Supplier Device Package
- TO-220AB
- Packaging
- Tube
- Gate Charge (Qg) (Max) @ Vgs
- 9.3nC @ 4.5V
- Vgs (Max)
- ±18V
- Drain to Source Voltage (Vdss)
- 600V
- Technology
- GaNFET (Gallium Nitride)
- Input Capacitance (Ciss) (Max) @ Vds
- 760pF @ 480V
- FET Feature
- -
- Current - Continuous Drain (Id) @ 25°C
- 17A (Tc)
- Part Status
- Not For New Designs
- Drive Voltage (Max Rds On, Min Rds On)
- 10V
- Mounting Type
- Through Hole
- Package / Case
- TO-220-3
- Vgs(th) (Max) @ Id
- 2.6V @ 500µA
- Operating Temperature
- -55°C ~ 175°C (TJ)
- Rds On (Max) @ Id, Vgs
- 180mOhm @ 11A, 8V