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ROHM Semiconductor SCT3060ALHRC11

AUTOMOTIVE GRADE N-CHANNEL SIC P

Manufacturer
ROHM Semiconductor
Datasheet
Price
20.09
Stock
658

Product Details

Power Dissipation (Max)
134W
Series
Automotive, AEC-Q101
Supplier Device Package
TO-247N
FET Type
N-Channel
Gate Charge (Qg) (Max) @ Vgs
51nC @ 18V
Vgs (Max)
+22V, -4V
Drain to Source Voltage (Vdss)
1200V
Technology
SiCFET (Silicon Carbide)
Input Capacitance (Ciss) (Max) @ Vds
574pF @ 800V
FET Feature
-
Current - Continuous Drain (Id) @ 25°C
24A (Tc)
Part Status
Active
Drive Voltage (Max Rds On, Min Rds On)
18V
Mounting Type
Through Hole
Package / Case
TO-247-3
Vgs(th) (Max) @ Id
5.6V @ 3.81mA
Operating Temperature
175°C (TJ)
Rds On (Max) @ Id, Vgs
137mOhm @ 7.6A, 18V