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ROHM Semiconductor SCT2H12NYTB
1700V 1.2 OHM 4A SIC FET
- Manufacturer
- ROHM Semiconductor
- Datasheet
- Price
- 0
- Stock
- 2167
Product Details
- Mounting Type
- Through Hole
- Package / Case
- TO-247-3
- Vgs(th) (Max) @ Id
- 4V @ 250µA
- Operating Temperature
- -55°C ~ 150°C (TJ)
- Rds On (Max) @ Id, Vgs
- 270mOhm @ 12A, 10V
- Series
- -
- Power Dissipation (Max)
- 280W (Tc)
- FET Type
- N-Channel
- Supplier Device Package
- TO-247-3
- Packaging
- Tube
- Gate Charge (Qg) (Max) @ Vgs
- 210nC @ 10V
- Vgs (Max)
- ±20V
- Drain to Source Voltage (Vdss)
- 500V
- Technology
- MOSFET (Metal Oxide)
- Input Capacitance (Ciss) (Max) @ Vds
- 4200pF @ 25V
- FET Feature
- -
- Current - Continuous Drain (Id) @ 25°C
- 20A (Tc)
- Part Status
- Active
- Drive Voltage (Max Rds On, Min Rds On)
- 10V