ROHM Semiconductor RZR025P01TL

Product Details

Series

-

Power Dissipation (Max)

2.8W (Ta)

FET Type

N-Channel

Supplier Device Package

6-DFN-EP (2x2)

Packaging

Digi-Reel®

Gate Charge (Qg) (Max) @ Vgs

18nC @ 4.5V

Vgs (Max)

±8V

Drain to Source Voltage (Vdss)

20V

Technology

MOSFET (Metal Oxide)

Input Capacitance (Ciss) (Max) @ Vds

1140pF @ 10V

FET Feature

-

Current - Continuous Drain (Id) @ 25°C

8A (Ta)

Part Status

Active

Drive Voltage (Max Rds On, Min Rds On)

1.5V, 4.5V

Mounting Type

Surface Mount

Package / Case

6-UDFN Exposed Pad

Vgs(th) (Max) @ Id

1V @ 250µA

Operating Temperature

-55°C ~ 150°C (TJ)

Rds On (Max) @ Id, Vgs

12.5mOhm @ 8A, 4.5V