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ROHM Semiconductor RW1E025RPT2CR
MOSFET P-CH 30V 2.5A WEMT6
- Manufacturer
- ROHM Semiconductor
- Datasheet
- Price
- 0
- Stock
- 8274
Product Details
- FET Feature
- -
- Current - Continuous Drain (Id) @ 25°C
- 500mA (Ta)
- Part Status
- Active
- Drive Voltage (Max Rds On, Min Rds On)
- 1.2V, 4.5V
- Mounting Type
- Surface Mount
- Package / Case
- 3-XFDFN
- Vgs(th) (Max) @ Id
- 950mV @ 250µA
- Operating Temperature
- -55°C ~ 150°C (TJ)
- Rds On (Max) @ Id, Vgs
- 1.4Ohm @ 500mA, 4.5V
- Series
- -
- Power Dissipation (Max)
- 360mW (Ta), 2.7W (Tc)
- FET Type
- P-Channel
- Supplier Device Package
- DFN1006B-3
- Packaging
- Digi-Reel®
- Gate Charge (Qg) (Max) @ Vgs
- 2.1nC @ 4.5V
- Vgs (Max)
- ±8V
- Drain to Source Voltage (Vdss)
- 20V
- Technology
- MOSFET (Metal Oxide)
- Input Capacitance (Ciss) (Max) @ Vds
- 43pF @ 10V