ROHM Semiconductor RW1E015RPT2R

Product Details

Package / Case

6-WDFN Exposed Pad

Vgs(th) (Max) @ Id

1.2V @ 250µA

Operating Temperature

-55°C ~ 150°C (TJ)

Rds On (Max) @ Id, Vgs

15.1mOhm @ 8A, 8V

Series

NexFET™

Power Dissipation (Max)

16W (Tc)

FET Type

N-Channel

Supplier Device Package

6-WSON (2x2)

Packaging

Digi-Reel®

Gate Charge (Qg) (Max) @ Vgs

6nC @ 4.5V

Vgs (Max)

±10V

Drain to Source Voltage (Vdss)

30V

Technology

MOSFET (Metal Oxide)

Input Capacitance (Ciss) (Max) @ Vds

879pF @ 15V

FET Feature

-

Current - Continuous Drain (Id) @ 25°C

25A (Tc)

Part Status

Active

Drive Voltage (Max Rds On, Min Rds On)

2.5V, 8V

Mounting Type

Surface Mount