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ROHM Semiconductor RW1C020UNT2R
MOSFET N-CH 20V 2A WEMT6
- Manufacturer
- ROHM Semiconductor
- Datasheet
- Price
- 0
- Stock
- 0
Product Details
- Technology
- MOSFET (Metal Oxide)
- Input Capacitance (Ciss) (Max) @ Vds
- 939pF @ 15V
- FET Feature
- -
- Current - Continuous Drain (Id) @ 25°C
- 5.3A (Ta)
- Part Status
- Last Time Buy
- Drive Voltage (Max Rds On, Min Rds On)
- 4.5V, 10V
- Mounting Type
- Surface Mount
- Package / Case
- SOT-23-6 Thin, TSOT-23-6
- Vgs(th) (Max) @ Id
- 2V @ 20µA
- Operating Temperature
- -55°C ~ 150°C (TJ)
- Rds On (Max) @ Id, Vgs
- 45mOhm @ 5.3A, 10V
- Series
- OptiMOS™
- Power Dissipation (Max)
- 2W (Ta)
- FET Type
- P-Channel
- Supplier Device Package
- PG-TSOP-6-6
- Packaging
- Tape & Reel (TR)
- Gate Charge (Qg) (Max) @ Vgs
- 14nC @ 10V
- Vgs (Max)
- ±20V
- Drain to Source Voltage (Vdss)
- 30V