ROHM Semiconductor RW1C015UNT2R

Product Details

Packaging

Tape & Reel (TR)

Gate Charge (Qg) (Max) @ Vgs

19.6nC @ 10V

Vgs (Max)

±25V

Drain to Source Voltage (Vdss)

30V

Technology

MOSFET (Metal Oxide)

Input Capacitance (Ciss) (Max) @ Vds

1204pF @ 15V

FET Feature

-

Current - Continuous Drain (Id) @ 25°C

10.4A (Ta)

Part Status

Active

Drive Voltage (Max Rds On, Min Rds On)

4V, 10V

Mounting Type

Surface Mount

Package / Case

6-UDFN Exposed Pad

Vgs(th) (Max) @ Id

3V @ 250µA

Operating Temperature

-55°C ~ 150°C (TJ)

Rds On (Max) @ Id, Vgs

19mOhm @ 4.5A, 10V

Series

-

Power Dissipation (Max)

2W (Ta)

FET Type

P-Channel

Supplier Device Package

U-DFN2020-6 (Type E)