Images are for reference only. See Product Specifications for product details
ROHM Semiconductor RW1A020ZPT2R
MOSFET P-CH 12V 2A WEMT6
- Manufacturer
- ROHM Semiconductor
- Datasheet
- Price
- 0.61
- Stock
- 6730
Product Details
- Vgs (Max)
- ±20V
- Drain to Source Voltage (Vdss)
- 30V
- Technology
- MOSFET (Metal Oxide)
- Input Capacitance (Ciss) (Max) @ Vds
- 760pF @ 15V
- FET Feature
- -
- Current - Continuous Drain (Id) @ 25°C
- 8A (Ta)
- Part Status
- Active
- Drive Voltage (Max Rds On, Min Rds On)
- 4.5V, 10V
- Mounting Type
- Surface Mount
- Package / Case
- 8-SOIC (0.154", 3.90mm Width)
- Vgs(th) (Max) @ Id
- 2.4V @ 250µA
- Operating Temperature
- -55°C ~ 150°C (TJ)
- Rds On (Max) @ Id, Vgs
- 32mOhm @ 8A, 10V
- Series
- -
- Power Dissipation (Max)
- 3.1W (Ta)
- FET Type
- P-Channel
- Supplier Device Package
- 8-SOIC
- Packaging
- Cut Tape (CT)
- Gate Charge (Qg) (Max) @ Vgs
- 16nC @ 10V