ROHM Semiconductor RV2C010UNT2L

Product Details

Vgs(th) (Max) @ Id

2.1V @ 250µA

Operating Temperature

-55°C ~ 150°C (TJ)

Rds On (Max) @ Id, Vgs

2.8Ohm @ 200mA, 10V

Series

TrenchMOS™

Power Dissipation (Max)

350mW (Ta), 3.1W (Tc)

FET Type

N-Channel

Supplier Device Package

DFN1006B-3

Packaging

Digi-Reel®

Gate Charge (Qg) (Max) @ Vgs

1nC @ 10V

Vgs (Max)

±20V

Drain to Source Voltage (Vdss)

60V

Technology

MOSFET (Metal Oxide)

Input Capacitance (Ciss) (Max) @ Vds

23.6pF @ 10V

FET Feature

-

Current - Continuous Drain (Id) @ 25°C

350mA (Ta)

Part Status

Active

Drive Voltage (Max Rds On, Min Rds On)

5V, 10V

Mounting Type

Surface Mount

Package / Case

3-XFDFN