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ROHM Semiconductor RUM002N02T2L
MOSFET N-CH 20V 0.2A VMT3
- Manufacturer
- ROHM Semiconductor
- Datasheet
- Price
- 0
- Stock
- 5266
Product Details
- FET Feature
- -
- Current - Continuous Drain (Id) @ 25°C
- 8A (Tc)
- Part Status
- Active
- Drive Voltage (Max Rds On, Min Rds On)
- 1.8V, 4.5V
- Mounting Type
- Surface Mount
- Package / Case
- SOT-23-6 Thin, TSOT-23-6
- Vgs(th) (Max) @ Id
- 1V @ 250µA
- Operating Temperature
- -55°C ~ 150°C (TJ)
- Rds On (Max) @ Id, Vgs
- 24mOhm @ 7.5A, 4.5V
- Series
- TrenchFET®
- Power Dissipation (Max)
- 3.6W (Tc)
- FET Type
- P-Channel
- Supplier Device Package
- 6-TSOP
- Packaging
- Digi-Reel®
- Gate Charge (Qg) (Max) @ Vgs
- 30nC @ 4.5V
- Vgs (Max)
- ±8V
- Drain to Source Voltage (Vdss)
- 20V
- Technology
- MOSFET (Metal Oxide)
- Input Capacitance (Ciss) (Max) @ Vds
- 1825pF @ 10V