ROHM Semiconductor RT1E040RPTR

Product Details

Operating Temperature

-55°C ~ 150°C (TJ)

Series

-

Rds On (Max) @ Id, Vgs

15.3mOhm @ 4A, 4.5V

FET Type

P-Channel

Power Dissipation (Max)

730mW (Ta)

Packaging

Cut Tape (CT)

Supplier Device Package

U-DFN2020-6 (Type F)

Vgs (Max)

±8V

Gate Charge (Qg) (Max) @ Vgs

48.3nC @ 8V

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

12V

FET Feature

-

Input Capacitance (Ciss) (Max) @ Vds

2712pF @ 10V

Part Status

Active

Current - Continuous Drain (Id) @ 25°C

9.5A (Ta)

Mounting Type

Surface Mount

Drive Voltage (Max Rds On, Min Rds On)

1.5V, 4.5V

Package / Case

6-UDFN Exposed Pad

Base Part Number

DMP1022

Vgs(th) (Max) @ Id

800mV @ 250µA