ROHM Semiconductor RSR010N10TL

Product Details

Rds On (Max) @ Id, Vgs

37mOhm @ 7.8A, 10V

Series

HEXFET®

Power Dissipation (Max)

2.1W (Ta)

FET Type

P-Channel

Supplier Device Package

6-PQFN (2x2)

Packaging

Digi-Reel®

Gate Charge (Qg) (Max) @ Vgs

13nC @ 10V

Vgs (Max)

±20V

Drain to Source Voltage (Vdss)

30V

Technology

MOSFET (Metal Oxide)

Input Capacitance (Ciss) (Max) @ Vds

580pF @ 25V

FET Feature

-

Current - Continuous Drain (Id) @ 25°C

6A (Ta), 13A (Tc)

Part Status

Active

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Mounting Type

Surface Mount

Package / Case

6-PowerVDFN

Vgs(th) (Max) @ Id

2.4V @ 25µA

Operating Temperature

-55°C ~ 150°C (TJ)