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ROHM Semiconductor RSQ015N06TR

MOSFET N-CH 60V 1.5A TSMT6

Manufacturer
ROHM Semiconductor
Datasheet
Price
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Stock
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Product Details

Package / Case
6-UDFN Exposed Pad
Vgs(th) (Max) @ Id
2.7V @ 250µA
Operating Temperature
-55°C ~ 150°C (TJ)
Rds On (Max) @ Id, Vgs
95mOhm @ 3A, 10V
Power Dissipation (Max)
1.6W (Ta)
Series
Automotive, AEC-Q101
Supplier Device Package
6-DFN2020MD (2x2)
FET Type
N-Channel
Gate Charge (Qg) (Max) @ Vgs
9.2nC @ 10V
Vgs (Max)
±20V
Drain to Source Voltage (Vdss)
60V
Technology
MOSFET (Metal Oxide)
Input Capacitance (Ciss) (Max) @ Vds
305pF @ 30V
FET Feature
-
Current - Continuous Drain (Id) @ 25°C
4.4A (Ta)
Part Status
Active
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Mounting Type
Surface Mount