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ROHM Semiconductor RSJ250P10FRATL
4V DRIVE PCH MOSFET (AEC-Q101 QU
- Manufacturer
- ROHM Semiconductor
- Datasheet
- Price
- 0
- Stock
- 461
Product Details
- Series
- HEXFET®
- Power Dissipation (Max)
- 110W (Tc)
- FET Type
- N-Channel
- Supplier Device Package
- TO-220AB
- Packaging
- Tube
- Gate Charge (Qg) (Max) @ Vgs
- 35nC @ 4.5V
- Vgs (Max)
- ±20V
- Drain to Source Voltage (Vdss)
- 30V
- Technology
- MOSFET (Metal Oxide)
- Input Capacitance (Ciss) (Max) @ Vds
- 2840pF @ 15V
- FET Feature
- -
- Current - Continuous Drain (Id) @ 25°C
- 105A (Tc)
- Part Status
- Last Time Buy
- Drive Voltage (Max Rds On, Min Rds On)
- 4.5V, 10V
- Mounting Type
- Through Hole
- Package / Case
- TO-220-3
- Vgs(th) (Max) @ Id
- 2.25V @ 250µA
- Operating Temperature
- -55°C ~ 175°C (TJ)
- Rds On (Max) @ Id, Vgs
- 6mOhm @ 21A, 10V