ROHM Semiconductor RSD220N06TL

Product Details

FET Feature

Super Junction

Current - Continuous Drain (Id) @ 25°C

4A (Tc)

Part Status

Active

Drive Voltage (Max Rds On, Min Rds On)

10V

Mounting Type

Through Hole

Package / Case

TO-251-3 Stub Leads, IPak

Vgs(th) (Max) @ Id

3.5V @ 70µA

Operating Temperature

-40°C ~ 150°C (TJ)

Rds On (Max) @ Id, Vgs

2Ohm @ 1A, 10V

Series

CoolMOS™

Power Dissipation (Max)

42W (Tc)

FET Type

N-Channel

Supplier Device Package

PG-TO251-3

Packaging

Tube

Gate Charge (Qg) (Max) @ Vgs

7.8nC @ 10V

Vgs (Max)

±20V

Drain to Source Voltage (Vdss)

700V

Technology

MOSFET (Metal Oxide)

Input Capacitance (Ciss) (Max) @ Vds

163pF @ 100V