ROHM Semiconductor RSD160P05TL

Product Details

Vgs (Max)

±20V

Drain to Source Voltage (Vdss)

30V

Technology

MOSFET (Metal Oxide)

Input Capacitance (Ciss) (Max) @ Vds

2363pF @ 12V

FET Feature

-

Current - Continuous Drain (Id) @ 25°C

8.3A (Ta), 69A (Tc)

Part Status

Active

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 11.5V

Mounting Type

Surface Mount

Package / Case

8-PowerWDFN

Vgs(th) (Max) @ Id

2.5V @ 250µA

Operating Temperature

-55°C ~ 150°C (TJ)

Rds On (Max) @ Id, Vgs

5mOhm @ 20A, 10V

Series

-

Power Dissipation (Max)

660mW (Ta), 46.3W (Tc)

FET Type

N-Channel

Supplier Device Package

8-WDFN (3.3x3.3)

Packaging

Digi-Reel®

Gate Charge (Qg) (Max) @ Vgs

29nC @ 11.5V