ROHM Semiconductor RS3E095BNGZETB

Product Details

FET Type

N-Channel

Gate Charge (Qg) (Max) @ Vgs

20.1nC @ 10V

Packaging

Digi-Reel®

Drain to Source Voltage (Vdss)

60V

Technology

MOSFET (Metal Oxide)

Input Capacitance (Ciss) (Max) @ Vds

1143pF @ 25V

FET Feature

-

Current - Continuous Drain (Id) @ 25°C

50A (Tc)

Part Status

Active

Mounting Type

Surface Mount

Package / Case

TO-252-5, DPak (4 Leads + Tab), TO-252AD

Vgs(th) (Max) @ Id

3V @ 250µA

Operating Temperature

-55°C ~ 175°C (TJ)

Rds On (Max) @ Id, Vgs

23mOhm @ 12A, 10V

Power Dissipation (Max)

2.1W (Ta)

Series

Automotive, AEC-Q101

Supplier Device Package

TO-252-4L