ROHM Semiconductor RS1G260MNTB

Product Details

Operating Temperature

150°C (TJ)

Rds On (Max) @ Id, Vgs

290mOhm @ 5.8A, 10V

Series

DTMOSV

Power Dissipation (Max)

100W (Tc)

FET Type

N-Channel

Supplier Device Package

DPAK

Packaging

Tape & Reel (TR)

Gate Charge (Qg) (Max) @ Vgs

25nC @ 10V

Vgs (Max)

±30V

Drain to Source Voltage (Vdss)

650V

Technology

MOSFET (Metal Oxide)

Input Capacitance (Ciss) (Max) @ Vds

730pF @ 300V

FET Feature

-

Current - Continuous Drain (Id) @ 25°C

11.5A (Tc)

Part Status

Active

Drive Voltage (Max Rds On, Min Rds On)

10V

Mounting Type

Surface Mount

Package / Case

TO-252-3, DPak (2 Leads + Tab), SC-63

Vgs(th) (Max) @ Id

4V @ 450µA