ROHM Semiconductor RS1E350BNTB

Product Details

Vgs (Max)

±20V

Drain to Source Voltage (Vdss)

80V

Technology

MOSFET (Metal Oxide)

Input Capacitance (Ciss) (Max) @ Vds

1640pF @ 40V

FET Feature

-

Current - Continuous Drain (Id) @ 25°C

15A (Ta), 74A (Tc)

Part Status

Active

Drive Voltage (Max Rds On, Min Rds On)

6V, 10V

Mounting Type

Surface Mount

Package / Case

8-PowerTDFN, 5 Leads

Vgs(th) (Max) @ Id

4V @ 95µA

Operating Temperature

-55°C ~ 175°C (TJ)

Rds On (Max) @ Id, Vgs

6.7mOhm @ 15A, 10V

Series

-

Power Dissipation (Max)

3.7W (Ta), 89W (Tc)

FET Type

N-Channel

Supplier Device Package

5-DFN (5x6) (8-SOFL)

Packaging

Digi-Reel®

Gate Charge (Qg) (Max) @ Vgs

25nC @ 10V