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ROHM Semiconductor RS1E281BNTB1
RS1E281BN IS LOW ON-RESISTANCE A
- Manufacturer
- ROHM Semiconductor
- Datasheet
- Price
- 0
- Stock
- 2500
Product Details
- FET Type
- N-Channel
- Power Dissipation (Max)
- 60W (Tc)
- Packaging
- Digi-Reel®
- Supplier Device Package
- PowerFlat™ (5x6)
- Vgs (Max)
- ±22V
- Gate Charge (Qg) (Max) @ Vgs
- 12nC @ 4.5V
- Technology
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)
- 30V
- FET Feature
- -
- Input Capacitance (Ciss) (Max) @ Vds
- 1500pF @ 25V
- Part Status
- Obsolete
- Current - Continuous Drain (Id) @ 25°C
- 65A (Tc)
- Mounting Type
- Surface Mount
- Drive Voltage (Max Rds On, Min Rds On)
- 4.5V, 10V
- Package / Case
- 8-PowerVDFN
- Base Part Number
- STL65
- Vgs(th) (Max) @ Id
- 1V @ 250µA
- Operating Temperature
- -55°C ~ 150°C (TJ)
- Series
- STripFET™ V
- Rds On (Max) @ Id, Vgs
- 5.8mOhm @ 9.5A, 10V