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ROHM Semiconductor RS1E200BNTB
MOSFET N-CH 30V 20A 8HSOP
- Manufacturer
- ROHM Semiconductor
- Datasheet
- Price
- 0.55
- Stock
- 557
Product Details
- Vgs(th) (Max) @ Id
- 1.5V @ 100µA
- Operating Temperature
- 150°C (TJ)
- Rds On (Max) @ Id, Vgs
- 2Ohm @ 50MA, 2.5V
- Series
- -
- Power Dissipation (Max)
- 200mW (Ta)
- FET Type
- N-Channel
- Supplier Device Package
- SC-59-3
- Packaging
- Cut Tape (CT)
- Drain to Source Voltage (Vdss)
- 30V
- Vgs (Max)
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds
- 70pF @ 3V
- Technology
- MOSFET (Metal Oxide)
- Current - Continuous Drain (Id) @ 25°C
- 200mA (Ta)
- FET Feature
- -
- Drive Voltage (Max Rds On, Min Rds On)
- 2.5V
- Part Status
- Active
- Mounting Type
- Surface Mount
- Package / Case
- TO-236-3, SC-59, SOT-23-3