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ROHM Semiconductor RS1E180BNTB
MOSFET N-CHANNEL 30V 60A 8-HSOP
- Manufacturer
- ROHM Semiconductor
- Datasheet
- Price
- 0
- Stock
- 0
Product Details
- Series
- -
- Power Dissipation (Max)
- 320mW (Ta)
- FET Type
- N-Channel
- Supplier Device Package
- TUMT3
- Packaging
- Digi-Reel®
- Gate Charge (Qg) (Max) @ Vgs
- 5nC @ 4.5V
- Vgs (Max)
- ±10V
- Drain to Source Voltage (Vdss)
- 20V
- Technology
- MOSFET (Metal Oxide)
- Input Capacitance (Ciss) (Max) @ Vds
- 370pF @ 10V
- FET Feature
- -
- Current - Continuous Drain (Id) @ 25°C
- 2.5A (Ta)
- Part Status
- Active
- Drive Voltage (Max Rds On, Min Rds On)
- 1.5V, 4.5V
- Mounting Type
- Surface Mount
- Package / Case
- 3-SMD, Flat Leads
- Vgs(th) (Max) @ Id
- 1.3V @ 1mA
- Operating Temperature
- 150°C (TJ)
- Rds On (Max) @ Id, Vgs
- 54mOhm @ 2.5A, 4.5V