ROHM Semiconductor RS1E130GNTB

Product Details

Vgs(th) (Max) @ Id

1.3V @ 250µA

Operating Temperature

-55°C ~ 150°C (TJ)

Rds On (Max) @ Id, Vgs

10.2mOhm @ 1.5A, 4.5V

Series

NexFET™

Power Dissipation (Max)

1.9W (Ta)

FET Type

N-Channel

Supplier Device Package

6-DSBGA (1x1.5)

Packaging

Digi-Reel®

Gate Charge (Qg) (Max) @ Vgs

11.2nC @ 4.5V

Vgs (Max)

±10V

Drain to Source Voltage (Vdss)

12V

Technology

MOSFET (Metal Oxide)

Input Capacitance (Ciss) (Max) @ Vds

1370pF @ 6V

FET Feature

-

Current - Continuous Drain (Id) @ 25°C

3.5A (Ta)

Part Status

Active

Drive Voltage (Max Rds On, Min Rds On)

2.5V, 4.5V

Mounting Type

Surface Mount

Package / Case

6-UFBGA, DSBGA