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ROHM Semiconductor RQ3G150GNTB
MOSFET N-CHANNEL 40V 39A 8HSMT
- Manufacturer
- ROHM Semiconductor
- Datasheet
- Price
- 0
- Stock
- 2910
Product Details
- Vgs (Max)
- ±20V
- Drain to Source Voltage (Vdss)
- 30V
- Technology
- MOSFET (Metal Oxide)
- Input Capacitance (Ciss) (Max) @ Vds
- 1683pF @ 15V
- FET Feature
- -
- Current - Continuous Drain (Id) @ 25°C
- 21A (Ta)
- Part Status
- Active
- Drive Voltage (Max Rds On, Min Rds On)
- 4.5V, 10V
- Mounting Type
- Surface Mount
- Package / Case
- 8-PowerWDFN
- Vgs(th) (Max) @ Id
- 2.2V @ 250µA
- Operating Temperature
- -55°C ~ 175°C (TJ)
- Rds On (Max) @ Id, Vgs
- 4.2mOhm @ 30A, 10V
- Series
- -
- Power Dissipation (Max)
- 3.1W (Ta), 37W (Tc)
- FET Type
- N-Channel
- Supplier Device Package
- 8-WDFN (3.3x3.3)
- Packaging
- Cut Tape (CT)
- Gate Charge (Qg) (Max) @ Vgs
- 26nC @ 10V