ROHM Semiconductor RQ3E180GNTB

Product Details

FET Type

P-Channel

Power Dissipation (Max)

660mW (Ta)

Packaging

Digi-Reel®

Supplier Device Package

Power Micro Foot® (2.4x2)

Vgs (Max)

±8V

Gate Charge (Qg) (Max) @ Vgs

180nC @ 8V

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

20V

FET Feature

-

Input Capacitance (Ciss) (Max) @ Vds

6900pF @ 10V

Part Status

Active

Current - Continuous Drain (Id) @ 25°C

7.7A (Ta)

Mounting Type

Surface Mount

Drive Voltage (Max Rds On, Min Rds On)

1.8V, 4.5V

Package / Case

30-XFBGA

Base Part Number

SI8851

Vgs(th) (Max) @ Id

1V @ 250µA

Operating Temperature

-55°C ~ 150°C (TJ)

Series

TrenchFET®

Rds On (Max) @ Id, Vgs

8mOhm @ 7A, 4.5V