Images are for reference only. See Product Specifications for product details
ROHM Semiconductor RQ3E180AJTB
MOSFET N-CH 30V 18A HSMR8
- Manufacturer
- ROHM Semiconductor
- Datasheet
- Price
- 0
- Stock
- 763
Product Details
- Vgs (Max)
- ±20V
- Drain to Source Voltage (Vdss)
- 30V
- Technology
- MOSFET (Metal Oxide)
- Input Capacitance (Ciss) (Max) @ Vds
- 5057pF @ 12V
- FET Feature
- -
- Current - Continuous Drain (Id) @ 25°C
- 100A (Tc)
- Part Status
- Active
- Drive Voltage (Max Rds On, Min Rds On)
- 4.5V, 10V
- Mounting Type
- Surface Mount
- Package / Case
- SC-100, SOT-669
- Vgs(th) (Max) @ Id
- 2.15V @ 1mA
- Operating Temperature
- -55°C ~ 175°C (TJ)
- Rds On (Max) @ Id, Vgs
- 1.7mOhm @ 15A, 10V
- Series
- -
- Power Dissipation (Max)
- 109W (Tc)
- FET Type
- N-Channel
- Supplier Device Package
- LFPAK56, Power-SO8
- Packaging
- Digi-Reel®
- Gate Charge (Qg) (Max) @ Vgs
- 77.9nC @ 10V