ROHM Semiconductor RQ3E130MNTB1

Product Details

FET Type

P-Channel

Supplier Device Package

U-DFN2020-6 (Type E)

Packaging

Digi-Reel®

Gate Charge (Qg) (Max) @ Vgs

14.4nC @ 4.5V

Vgs (Max)

±12V

Drain to Source Voltage (Vdss)

20V

Technology

MOSFET (Metal Oxide)

Input Capacitance (Ciss) (Max) @ Vds

1537pF @ 10V

FET Feature

-

Current - Continuous Drain (Id) @ 25°C

6.2A (Ta)

Part Status

Active

Drive Voltage (Max Rds On, Min Rds On)

1.8V, 4.5V

Mounting Type

Surface Mount

Package / Case

6-UDFN Exposed Pad

Vgs(th) (Max) @ Id

1.1V @ 250µA

Operating Temperature

-55°C ~ 150°C (TJ)

Rds On (Max) @ Id, Vgs

36mOhm @ 4.6A, 4.5V

Series

-

Power Dissipation (Max)

660mW (Ta)